Beilstein J. Nanotechnol.2020,11, 1644–1654, doi:10.3762/bjnano.11.147
and Computer Engineering at University of Connecticut, Storrs, CT-06269, USA 10.3762/bjnano.11.147 Abstract The dimensions of amorphized regions in phase-changememory cells are critical parameters to design devices for different applications. However, these dimensions are difficult to be determined
unpredictable programming feature in phase-changememory devices can be utilized in hardware security applications.
Keywords: amorphous materials; drift; electrical breakdown; electrical resistivity; phase-changememory; pulse measurement; stochastic processes; threshold switching; Introduction
Phase-change
and Icell to closely resemble the applied Vch1 and the IR_load, respectively (Equations 4–7) with lesser distortion.
Conclusion
We propose a method to extract the amorphized length in phase-changememory devices based on electrical measurements. We utilized this procedure to study the variability in
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Figure 1:
Schematic of the procedure used in this work for extraction of amorphized length in phase-change me...
Beilstein J. Nanotechnol.2013,4, 632–637, doi:10.3762/bjnano.4.70
the antennas are 40 nm, while the centre-to-centre distance d between the nearest neighbouring antenna is 100 nm.
Results and Discussion
The underlying GST thin film is a phase-change material that has been widely applied in commercial optical disks, optical switchers and phase-changememory [18][19
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Figure 1:
Schematic diagram of a near-field energy controllable template. With a monochromatic plane wave ill...